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MITSUBISHI SEMICONDUCTOR
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 COM COMMON
IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8

FEATURES High breakdown voltage (BVCEO 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide input voltage range (VI = -40 to +40V) Wide operating temperature range (Ta = -20 to +75C)
16P4(P) Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT 20K INPUT
20K 2K
FUNCTION The M54531P and M54531FP each have seven circuits consisting of NPN Darlington transistors. A serial circuit including a diode and resistance of 20k is provided between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54531FP is enclosed in a molded small flat package, enabling space-saving design.
GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Ratings -0.5 ~ +40 400 -40 ~ +40 400
Unit V mA V mA V W C C
Aug. 1999
Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
40 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125
MITSUBISHI SEMICONDUCTOR
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% IC 400mA "H" input voltage IC 200mA Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "L" input voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Limits min 0 0 0 9 6 0 typ -- -- -- -- -- -- max 40 400
Unit V
IC
mA 200 35 1 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II IIR VF IR hFE Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
Test conditions ICEO = 100A VI = 9V, IC = 400mA VI = 6V, IC = 200mA VI = 18V VI = 35V VI = -35V IF = 400mA VR = 40V VCE = 4V, IC = 300mA, Ta = 25C
Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Input reverse current Clamping diode forward voltage Clamping diode reverse current DC amplification factor
min 40 -- -- -- -- -- -- -- 1000
Limits typ+ -- 1.3 1.0 1.1 2.0 -- 1.4 -- 3500
max -- 2.4 1.6 1.8 3.8 -20 2.4 100 --
Unit V V mA A V A --
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 30 680 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Measured device OPEN PG 50 CL OUTPUT VO
TIMING DIAGRAM
50%
50%
RL
INPUT
OUTPUT 50% 50%
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 9VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 400
VI = 6V
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
M54531P
Collector current Ic (mA)
300
1.0
M54531FP
200
0.5
100
Ta = 75C Ta = 25C Ta = -20C
0
0
25
50
75
100
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54531P) 500 500
Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54531P)
Collector current Ic (mA)
Collector current Ic (mA)
400

400
300
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C
200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
100
100

0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) Duty-Cycle-Collector Characteristics (M54531FP) 500 500
Duty cycle (%) Duty-Cycle-Collector Characteristics (M54531FP)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
300
100

200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.
100

*Ta = 75C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor Collector Current Characteristics 104
7 VCE = 4V Ta = 75C Ta = 25C
Grounded Emitter Transfer Characteristics 400
VCE = 4V
DC amplification factor hFE
5 3 2
Collector current Ic (mA)
300
Ta = -20C
103
7 5 3 2
200
Ta = -20C Ta = 75C
100
Ta = 25C
102 1 10
2
3
5 7 102
2
3
5 7 103
0
0
1
2
3
4
Collector current Ic (mA)
Input voltage VI (V)
Input Characteristics 2.0
Forward bias current IF (mA)
Clamping Diode Characteristics 400
Input current II (mA)
1.5
Ta = -20C
300
1.0
Ta = 25C
200
0.5
Ta = 75C
100
Ta = 75C Ta = 25C Ta = -20C
0
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Aug. 1999

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